Si-nanocrystal-based leds fabricated by ion implantation and plasma-enhanced chemical vapour deposition.


AU: 
Perálvarez, M.; Barreto, J.; Carreras, J.; Morales, A.; Navarro-Urrios, D.; Lebour, Y.; Domínguez, C.; Garrido, B.
SO: 
Nanotechnology
Autores del GTQ: 
VL: 
20
IS: 
40
BP: 
405201 (10pp)
PY: 
2009
Impact: 
3.45
Resumen: 

An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Device

DT: 
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