Metal-nitride-oxide-semiconductor light-emitting devices for general lighting


AU: 
Berencen, Y; Carreras, J; Jambois, O; Ramirez, JM; Rodriguez, JA; Dominguez, C; Hunt, CE; Garrido, B
SO: 
OPTICS EXPRESS
Autores del GTQ: 
VL: 
19
IS: 
10
BP: 
A234
EP: 
A244
PY: 
2011
SN: 
1094-4087
Impact: 
3.75
Año IF: 
2010
Resumen: 

The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to low-cost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options.

DT: 
Article en revistes indexades
Percentil: 
HIGH
Año Percentil: 
2010
Categoría: 
OPTICS