Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition


AU: 
Peralvarez, M.; Garcia, C.; Lopez, M.; Garrido, B.; Barreto, J.; Dominguez, C.; Rodriguez, J.A.
SO: 
APPLIED PHYSICS LETTERS
Autores del GTQ: 
VL: 
89
IS: 
5
PY: 
2006
SN: 
0003-6951
Impact: 
3.98
Año IF: 
2006
Resumen: 

Field effect induced luminescence has been achieved by alternate tunnel injection of electrons and holes into Si nanocrystals. The emitting device is a metal-oxide-semiconductor structure with a semitransparent polycrystalline Si contact similar to 250 nm

DT: 
Article en revistes indexades
Percentil: 
HIGH
Año Percentil: 
2006
Categoría: 
PHYSICS, APPLIED