Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks


AU: 
Peralvarez, M.; Carreras, J.; Barreto, J.; Morales, A.; Dominguez, C.; Garrido, B.
SO: 
APPLIED PHYSICS LETTERS
Autores del GTQ: 
VL: 
92
IS: 
24
PY: 
2008
SN: 
0003-6951
Impact: 
3.73
Año IF: 
2008
Resumen: 

We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long lifetime. The power efficiency is enhanced up to simil

DT: 
Article en revistes indexades
Percentil: 
HIGH
Año Percentil: 
2008
Categoría: 
PHYSICS, APPLIED