Effect of hydrogen-related impurities on the thermal behavior of mechanical stress in silicon oxides suitable for integrated optics


AU: 
Dominguez, C.; Rodriguez, J.A.; Riera, M.; Llobera, A.; Diaz, B.
SO: 
JOURNAL OF APPLIED PHYSICS
Autores del GTQ: 
VL: 
93
IS: 
9
BP: 
5125
EP: 
5130
PY: 
2003
SN: 
0021-8979
Impact: 
2.17
Año IF: 
2003
Resumen: 

Silicon oxide films were deposited by plasma enhanced chemical vapor deposition on crystalline silicon substrates from a mixture of silane and nitrous oxide. Substrate temperature and [N2O]/[SiH4] precursor gas flow ratio were varied between 200-350 degre

DT: 
Article en revistes indexades
Percentil: 
HIGH
Año Percentil: 
2003
Categoría: 
PHYSICS, APPLIED