Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures


AU: 
Berencen, Y; Jambois, O; Ramirez, JM; Rebled, JM; Estrade, S; Peiro, F; Dominguez, C; Rodriguez, JA; Garrido, B
SO: 
OPTICS LETTERS
Autores del GTQ: 
VL: 
36
IS: 
14
BP: 
2617
EP: 
2619
PY: 
2011
SN: 
0146-9592
Impact: 
3.32
Año IF: 
2010
Resumen: 

Blue-green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 degrees C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO(2) layer. Charge transport analysis is reported and allows for identifying the origin of this two-wavelength switching effect.

DT: 
Article en revistes indexades
Percentil: 
HIGH
Año Percentil: 
2010
Categoría: 
HIGH