Blue and red electroluminescence of silicon-rich oxide light emitting capacitors


AU: 
Morales-Sanchez, A; Aceves-Mijares, M; Gonzalez-Fernandez, AA; Monfil-Leyva, K; Juvert, J; Dominguez-Horna, C
SO: 
SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS, II Proceedings of SPIE-The International Society for Optical Engineering
Autores del GTQ: 

Líneas de Investigación:

VL: 
7719
BP: 
77190N
PY: 
2010
SN: 
0277-786X
Resumen: 

Electroluminescent properties of thin silicon-rich oxide (SRO) films deposited by low pressure chemical vapor deposition (LPCVD) were studied. The gas flow ratio Ro = N(2)O/SiH(4) was changed to obtain different silicon concentrations within the SRO films. After deposition, SRO films were thermally annealed at 1100 degrees C for 3h in N(2) atmosphere in order to create silicon nanoparticles (Si-nps). Simple capacitive structures like Polysilicon/SRO/n-Si were used for the study. These light emitting capacitors (LECs) show intense blue (similar to 466) and red EL (similar to 685) at room temperature depending on the silicon excess within the SRO films. Electroluminescence in these LECs is obtained at direct current (DC) at both forward and reverse bias conditions. Nevertheless, a stronger whole area EL is obtained when devices are forwardly biased.

DT: 
Proceeding paper