Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals


AU: 
Carreras, J.; Bonafos, C.; Montserrat, J.; Dominguez, C.; Arbiol, J.; Garrido, B.
SO: 
NANOTECHNOLOGY
Autores del GTQ: 
VL: 
19
IS: 
20
PY: 
2008
SN: 
0957-4484
Impact: 
3.45
Año IF: 
2008
Resumen: 

We describe high-speed control of light from silicon nanocrystals under electrical excitation. The nanocrystals are fabricated by the ion implantation of Si+ in the 15 nm thick gate oxide of a field effect transistor at 6.5 keV. A characteristic read-peak

DT: 
Article en revistes indexades
Percentil: 
HIGH
Año Percentil: 
2008
Categoría: 
ENGINEERING, MULTIDISCIPLINARY