Influence by Layer Structure on the Output EL of CMOS Compatible Silicon-Based Light Emitters


AU: 
Gonzalez-Fernandez, AA; Juvert, J; Aceves-Mijares, M; Llobera, A; Dominguez, C
SO: 
IEEE T. Electron Devices
GTQ Authors: 
Research Lines: 
Solid State Light Emitters
VL: 
60
IS: 
6
BP: 
1971
EP: 
1974
PY: 
2013
SN: 
0018-9383
IF: 
2.06
Year IF: 
2012
Abstract: 

Fully combined metal-oxide-semiconductor compatible light-emitting devices based on nano bi-layer structures are fabricated. The active layers are composed of silicon nitride on top of a silicon-enriched silicon dioxide film with different Si concentrations. Electro and photo luminescence spectra of the devices and the active materials are analyzed and correlated to verify if the origin of the emission is the same. Differences found between electrically and optically stimulated photo-emission in the studied region of the spectra are concluded to be due to optical phenomena introduced by the gate and multilayer configuration, meaning that the same radiative centers are stimulated optically and electrically.

DT: 
Article en revistes indexades
Percentil: 
HIGH
Percentil Year: 
2012
Category: 
ENGINEERING, ELECTRICAL & ELECTRONIC