Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantation


AU: 
Gonzalez-Fernandez, AA; Juvert, J; Morales-Sanchez, A; Barreto, J; Aceves-Mijares, M; Dominguez, C
SO: 
JOURNAL OF APPLIED PHYSICS
GTQ Authors: 
VL: 
111
IS: 
5
BP: 
053109
PY: 
2012
SN: 
0021-8979
Impact: 
2.08
Year IF: 
2011
Abstract: 

This work presents electrical and electro-optical studies performed on light-emitting capacitors with silicon-rich silicon oxide fabricated by plasma-enhanced chemical vapor deposition and by the implantation of Si ions in thermally grown SiO2. The influence of the fabrication technique and silicon content on electrical, electro-optical, and emission spectra characteristics has been studied. Results on the electrical behavior show a significant dependence on both the fabrication technique and Si content that translates in variations on electroluminescence with fabrication technique and silicon excess.

DT: 
Article en revistes indexades
Percentil: 
HIGH
Percentil Year: 
2011
Category: 
PHYSICS, APPLIED