Silicon rich oxide (SRO) films with different silicon excess were deposited by low pressure chemical vapor deposition (LPCVD) using SiH4 and N2O as the reactant gasses. A set of SRO films was implanted with silicon ions (SI-SRO). After thermal annealing,
Links
[1] http://gtq.imb-cnm.csic.es/en/equipo/carlos-dominguez-horna
[2] http://dx.doi.org/10.1016/j.sna.2007.03.008