Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices


AU: 
Berencen, Y; Mundet, B; Rodriguez, JA; Montserrat, J; Dominguez, C; Garrido, B
SO: 
JOURNAL OF LUMINESCENCE
GTQ Authors: 

Research Lines:

VL: 
183
IS: 
BP: 
26
EP: 
31
PY: 
2017
SN: 
0022-2313
IF: 
2.69
Year IF: 
2017
Abstract: 
DT: 
Article en revistes indexades
Percentil: 
MEDIUM
Percentil Year: 
2016
Category: 
OPTICS
KW: 
Hot electron engineering; Silicon-rich nitride; Electrical transport; Electroluminescent devices