Pulsed electroluminescence in silicon nanocrystals-based devices fabricated by PECVD


AU: 
Barreto, J.; Peralvarez, M.; Rodriguez, J.A.; Morales, A.; Riera, M Lopez, M.; Garrido, B.; Lechuga, L.M.; Dominguez, C.
SO: 
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Autors del GTQ: 
VL: 
38
IS: 
01/02/11
BP: 
193
EP: 
196
PY: 
2007
SN: 
1386-9477
Impact: 
0.83
Any IF: 
2007
Resum: 

Fully compatible CMOS capacitive devices have been developed in order to obtain electrically stimulated luminescence. By high-temperature annealing in N-2 atmosphere PECVD non-stoichiometric silica layers, silicon nanocrystals were formed. Photoluminescen

DT: 
Article en revistes indexades
Percentil: 
LOW
Any Percentil: 
2007
Categoria: 
NANOSCIENCE & NANOTECHNOLOGY