On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition


AU: 
Aceves-Mijares, M; Gonzalez-Fernandez, AA; Lopez-Estopier, R; Luna-Lopez, A; Berman-Mendoza, D; Morales, A; Falcony, C; Dominguez, C; Murphy-Arteaga, R
SO: 
Journal of Nanomaterials
Autors del GTQ: 
BP: 
890701
PY: 
2012
SN: 
1687-4110
Impact: 
1.38
Any IF: 
2011
Resum: 

Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100 degrees C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

DT: 
Article en revistes indexades
Percentil: 
MEDIUM
Any Percentil: 
2011
Categoria: 
MATERIALS SCIENCE, MULTIDISCIPLINARY