Novel voltage-controlled conditioning circuit applied to the ISFETs temporary drift and thermal dependency


AU: 
Casans, S.; Navarro, A.E.; Ramirez, D.; Castro, E.; Baldi, A.; Abramova, N.
SO: 
SENSORS AND ACTUATORS B-CHEMICAL
Autors del GTQ: 
VL: 
91
IS: 
01/03/11
BP: 
11
EP: 
16
PY: 
2003
SN: 
0925-4005
Impact: 
2.39
Any IF: 
2003
Resum: 

This paper describes a novel conditioning circuit applied to ion-sensitive field-effect transistors/membrane-ion-sensitive field-effect transistors (ISFETs/MEMFETs) sensors. The novel conditioning circuit allows the sensor polarization with the needed eit

DT: 
Article en revistes indexades
Percentil: 
HIGH
Any Percentil: 
2003
Categoria: 
CHEMISTRY, ANALYTICAL