The mechanism of electrical annihilation of conductive paths and charge trapping in silicon-rich oxides.


AU: 
Morales-Sanchez, A.; Barreto, J.; Dominguez, C.; Aceves, M.; Luna-Lopez, J.A.
SO: 
NANOTECHNOLOGY
Autors del GTQ: 
VL: 
20
IS: 
4
BP: 
045201 (7pp)
PY: 
2009
SN: 
0957-4484
Impact: 
3.45
Any IF: 
2008
Resum: 

The electrical properties of silicon-rich oxide (SRO) films in metal-oxide-semiconductor-like structures were analysed by current versus voltage (I-V) and capacitance versus voltage (C-V) techniques. SRO films were thermally annealed to activate the agglo

DT: 
Article en revistes indexades
Percentil: 
HIGH
Any Percentil: 
2008
Categoria: 
ENGINEERING, MULTIDISCIPLINARY