Ion beam analysis of PECVD silicon oxide thin films


AU: 
Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca-Filho, H.D.; Llobera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.
SO: 
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Autors del GTQ: 
VL: 
243
IS: 
1
BP: 
200
EP: 
204
PY: 
2006
SN: 
0168-583X
Impact: 
0.95
Any IF: 
2006
Resum: 

A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (I pin thick) obtained from silane (SiH4) and nitrous oxide (N2O) is reported. The film, elemental composition and surface morphology were

DT: 
Article en revistes indexades
Percentil: 
HIGH
Any Percentil: 
2006
Categoria: 
INSTRUMENTS & INSTRUMENTATION